tag: eFLASH

Challenges In Making And Testing STT-MRAM
By Mark LaPedus - 07 May, 2019 - Comments: 1

Several chipmakers are ramping up a next-generation memory type called STT-MRAM, but there are still an assortment of manufacturing and test challenges for current and future devices. STT-MRAM, or spin-transfer torque MRAM, is attractive and gaining steam because it combines the attributes of several conventional memory types in a single device. In the works for years, STT-MRAM features the ... » read more

Embedded Phase-Change Memory Emerges
By Mark LaPedus - 24 Jan, 2019 - Comments: 3

The next-generation memory market for embedded applications is becoming more crowded as another technology emerges in the arena—embedded phase-change memory. Phase-change memory is not new and has been in the works for decades. But the technology has taken longer to commercialize amid a number of technical and cost challenges. Phase-change memory, a nonvolatile memory type that stores data... » read more

A New Memory Contender?
By Mark LaPedus - 02 Jan, 2018 - Comments: 1

Momentum is building for a new class of ferroelectric memories that could alter the next-generation memory landscape. Generally, ferroelectrics are associated with a memory type called ferroelectric RAMs (FRAMs). Rolled out by several vendors in the late 1990s, FRAMs are low-power, nonvolatile devices, but they are also limited to niche applications and unable to scale beyond 130nm. While... » read more

Drill Down: Embedded NVM Technology
By Ernest Worthman - 02 Apr, 2015 - Comments: 0

Many of the next-generation devices that will be seen on the IoT/E will have power, footprint, and electronic constraints as never before. Electronic flash memories (eFLASH), and their derivatives are seen as a realistic solution to many of these design constraints for small form factor and simple IoE devices. “NVM will be very important for the IoE from the perspective of saving power," ... » read more

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