Improving Design Reliability By Avoiding Electrical Overstress


Electrical overstress (EOS) is one of the leading causes of IC failures across all semiconductor manufacturers, and is responsible for the vast majority of device failures and product returns. The use of multiple voltages increases the risk of EOS, so IC designers need to increase their diligence to ensure that thin-oxide digital transistors do not have direct or indirect paths to high-voltage ... » read more

Newer posts →