Turning Down The Voltage


Designers of large, advanced-node SoCs are grappling with a number of pressures in the quest to achieve the optimal performance and power of their designs. This has turned into a challenging balancing act between using less power, especially for consumer technologies, while also providing the same or greater performance and increased functionality. [getkc id="108" kc_name="Power"] and perfor... » read more

How Reliable Are FinFETs?


Stringent safety requirements in the automotive and industrial sectors are forcing chipmakers to re-examine a number of factors that can impact reliability over the lifespan of a device. Many of these concerns are not new. Electrical overstress (EOS), electrostatic discharge (ESD) and [getkc id="160" kc_name="electromigration"] (EM) are well understood, and have been addressed by EDA tools f... » read more

Supporting LP In New Process Nodes


Manufacturing process nodes and EDA tools are advancing all the time, but not always utilized at the same pace. And from a tools perspective, there are challenges to supporting low power in new process nodes while maintaining and improving the existing process nodes. One way design teams address this is by leveraging the most advanced software on the less-than-bleeding edge designs. To th... » read more

Improving Design Reliability By Avoiding Electrical Overstress


Electrical overstress (EOS) is one of the leading causes of IC failures across all semiconductor manufacturers, and is responsible for the vast majority of device failures and product returns. The use of multiple voltages increases the risk of EOS, so IC designers need to increase their diligence to ensure that thin-oxide digital transistors do not have direct or indirect paths to high-voltage ... » read more

Improving Design Reliability By Avoiding Electrical Overstress


Electrical overstress (EOS) is one of the leading causes of IC failures across all semiconductor manufacturers, and is responsible for the vast majority of device failures and product returns. The use of multiple voltages increases the risk of EOS, so IC designers need to increase their diligence to ensure that thin-oxide digital transistors do not have direct or indirect paths to high-voltage ... » read more