tag: EUV

Are Larger Reticle Sizes On The Horizon?
By Katherine Derbyshire - 19 Jun, 2025 - Comments: 0

Making high-NA EUV lithography work will take a manufacturing-worthy approach to stitching together circuits or a wholesale change to larger masks. Circuit stitching between the exposure fields is challenging the design, yield and manufacturability of the high-NA (0.55) EUV transition. The alternative is a radical change from 6x6-inch to 6x11-inch masks that would eliminate stitching, but it... » read more

Reaction Mechanisms in a Chemically Amplified EUV Photoresist (imec, KU Leuven)
By Technical Paper Link - 18 Jun, 2025 - Comments: 0

A new technical paper titled "Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach" was published by researchers at imec and KU Leuven. "Our combined experimental and theoretical approach shows that EUV photoemission can simultaneously resolve chemical dynamics and the production of primary and secondary electrons,... » read more

EUV Lithography: The Resolution Capability And Stochastic Behavior From Statistical Viewpoints
By Technical Paper Link - 18 Jun, 2025 - Comments: 0

A new technical paper titled "Statistics of EUV exposed nanopatterns: Photons to molecular dissolutions" was published by Hiroshi Fukuda, Hitachi High-Tech Corporation. Abstract "For higher computing power of semiconductor integrated circuits, pattern feature sizes below 10 nm are anticipated by introducing extreme ultraviolet (EUV) lithography with high numerical aperture (NA) optics. Ho... » read more

Photomask Changes And Challenges At Mature And Advanced Nodes
By Gregory Haley - 16 Jun, 2025 - Comments: 0

Experts at the Table: Semiconductor Engineering sat down to discuss the current state and future direction of mask-making, with Harry Levinson, principal lithographer at HJL Lithography; Aki Fujimura, CEO of D2S; Ezequiel Russell, senior director of mask technology at Micron; and Christopher Progler, executive vice president and CTO at Photronics. What follows are excerpts of that conversation.... » read more

Mask Complexity, Cost, And Change
By Gregory Haley - 22 May, 2025 - Comments: 0

Experts at the Table: As leading-edge lithography nodes push further into EUV and beyond, mask-making has become one of the most critical and costly aspects of semiconductor manufacturing. At the same time, non-EUV applications are stretching the lifetime of older tools and processes, challenging the industry to find new solutions for both ends of the spectrum. Semiconductor Engineering sat dow... » read more

Laser-Focused Results: Improving EUV Line Edge Roughness With Ion Beam Etching
By Timothy Yang - 22 May, 2025 - Comments: 1

Extreme ultraviolet (EUV) lithography exposed resist patterns can exhibit excessive line edge roughness (LER) and line width roughness (LWR) due to random or shot noise. Increasing the EUV exposure dose can reduce LER/LWR, but it also decreases wafer throughput, which is highly undesirable given the EUV tool’s high operating costs. Ion beam etching (IBE) can directionally etch away roug... » read more

Demonstration Of EUV Scatterometry On A 2D Periodic Interconnect
By Technical Paper Link - 18 May, 2025 - Comments: 0

A new technical paper titled "Coherent EUV scatterometry of 2D periodic structure profiles with mathematically optimal experimental design" was published by researchers at University of Colorado, NIST, Samsung and KMLAbs. Abstract "Extreme ultraviolet (EUV) scatterometry is an increasingly important metrology that can measure critical parameters of periodic nanostructured materials in a fas... » read more

Reflecting On The SPIE Advanced Lithography + Patterning Symposium 2025
By Harry Levinson - 20 Mar, 2025 - Comments: 0

The mood at this year’s SPIE Advanced Lithography + Patterning Symposium was decidedly upbeat. The outlook for business is good, due in large measure to expectations of high demand for chips, driven by artificial intelligence (AI). To realize the potential of AI, increases in chip performance and efficiency are needed, which, in turn, requires advanced patterning. In the Symposium’s technic... » read more

Many Options For EUV Photoresists, No Clear Winner
By Katherine Derbyshire - 20 Mar, 2025 - Comments: 3

In EUV lithography, and especially high-numerical-aperture EUV, balancing tradeoffs between resolution, sensitivity and line-width roughness is becoming increasingly difficult. Lithography patterning using extreme UV exposure depends on a resist mask that can simultaneously meet targets of small feature resolution, high sensitivity to EUV wavelength, and acceptable linewidth roughness. Unfor... » read more

EUV’s Future Looks Even Brighter
By Gregory Haley - 20 Feb, 2025 - Comments: 1

The rapidly increasing demand for advanced-node chips to support everything-AI is putting pressure on the industry's ability to meet demand. The need for cutting-edge semiconductors is accelerating in applications ranging from hyperscale data centers powering large language models to edge AI in smartphones, IoT devices, and autonomous systems. But manufacturing those chips relies heavily on ... » read more

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