Ultra-Low Power CiM Design For Practical Edge Scenarios

A technical paper titled “Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET” was published by researchers at Zhejiang University, University of Notre Dame, Technical University of Munich, Munich Institute of Robotics and Machine Intelligence, and the Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of Zhejiang Province. Abstract: "Compute... » read more

Research Bits: July 18

Miniaturized ferroelectric FETs Researchers from the University of Pennsylvania, Hanyang University, King Abdulaziz University, King Abdullah University of Science and Technology, and University of Tokyo proposed a new ferroelectric FET (FE-FET) design with improved performance for both computing and memory. The transistor layers the two-dimensional semiconductor molybdenum disulfide (MoS2)... » read more

Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD

A new technical paper titled "Large-area synthesis of high electrical performance MoS2  by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Power/Performance Bits: Jan. 7

Ferroelectric FET Researchers at Purdue University developed a ferroelectric transistor capable of both processing and storing information. The ferroelectric semiconductor field-effect transistor is made of alpha indium selenide, which overcomes the problem of ferroelectric materials not interfacing well with silicon. “We used a semiconductor that has ferroelectric properties. This way tw... » read more

A Ferroelectric Semiconductor Field-Effect Transistor

Abstract: "Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric sem... » read more