tag: finFET

FD-SOI – Recent Consortium Results (Part 1 of 3): Manufacturing
By Various Writers - 05 Mar, 2012 - Comments: 0

The most recent SOI Consortium benchmarking study regarding 28nm and 20nm FD-SOI results (silicon-calibrated simulations at the 28nm node of complex circuits including ARM cores and DDR3 memory controllers) covered a lot of ground. This post is part 1 of a 3-part blog series that will be highlighting key points with respect to: 1. manufacturing; 2. power & performance; 3. 20nm benchmarking ... » read more

How Long Will 28nm Last?
By Ed Sperling - 12 Jan, 2012 - Comments: 0

By Ann Steffora Mutschler As soon as a next generation semiconductor manufacturing process node is out, bets are taken on just how long the current advanced process node will last. The 28/20nm transition is no exception. There is certainly a benefit to moving from 40nm to 28nm. The  availability of high-k/metal gate technology offers quite a few advantages in terms of power reduction... » read more

FD-SOI bests FinFETs for mobile multimedia SOCs? ST says yes.
By Various Writers - 29 Nov, 2011 - Comments: 0

In a recent and excellent article in ASN by Thomas Skotnicki, Director of the Advanced Devices Program at STMicro, he explains in a very clear and accessible way why FD-SOI with ultra-thin Body & Box (UTBB) is a better solution for mobile, multimedia SOCs than FinFETs -- starting at the 28nm node and running clearly through 8nm.  It is based on the paper he presented at the 2011 IEEE SOI C... » read more

Getting Ready For 15nm
By Ed Sperling - 07 Oct, 2010 - Comments: 0

By David Lammers The trends towards vertical transistors, non-silicon channel materials, and resistive RAMs promise to hold center stage at the 2010 IEEE International Electron Devices Meeting (IEDM), set to begin Dec. 6 in San Francisco, Calif. (www.ieee-iedm.org) Taiwan Semiconductor Manufacturing Co. (TSMC, Hsinchu, Taiwan) will present a 22/20nm technology platform based on a FinFET arc... » read more

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