Advanced FTIR Optical Modeling for Hydrogen Content Measurements in 3D NAND Cell Nitride and Amorphous Carbon Hard Mask

Abstract Fourier Transform Infrared spectroscopy offers inline solutions for chemical bonding, epi thickness, and trench depth measurements. Through optical modeling of the transmission or reflectance spectra, information about the electronic structure and chemical composition may be obtained, which can be used for process control and monitoring. In this article, we demonstrate the measurement... » read more

FTIR On Earth, Mercury In Focus

On early hours on 19th October 2018 at Guiana Space Centre in Kourou in French Guiana an Ariane 5 rocket successfully launched the BepiColombo mission. It started its 7 years journey to Mercury. The joined mission of the European Space Agency (ESA) and the Japan Aerospace Exploration Agency (JAXA) was named in honor of Giuseppe “Bepi” Colombo, an Italian scientist who studied Mercury and fi... » read more

Using FTIR To Improve SiC Power Device Performance

The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

Advanced Modeling In FTIR Offers New Applications For HVM

In the leading high-volume manufacturing (HVM) process flows, materials-enabled scaling has increased inline applications for compositional metrology. A previous blog discussed how Fourier transform infrared (FTIR) spectroscopy was used for inline composition measurements. These measurements informed advanced process control for the wafer-level processing of selectively etched 3D NAND wordli... » read more

Expanded Material Metrology For Refined Etch Selectivities

Trends in advanced device fabrication require combined lithography-etching multi-patterning sequences and self-aligned multi-patterning to form devices’ finest features at subwavelength dimensions. As EUV lithography (13.5 nm) progresses to larger numerical apertures and new thin resists, new multipatterning sequences must be developed with mutually compatible resists and proximal layers t... » read more