Ferroelectric Tunnel Junctions In Crossbar Array Analog In-Memory Compute Accelerators


A technical paper titled “Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators” was published by researchers at Lund University. Abstract: "Neuromorphic computing has seen great interest as leaps in artificial intelligence (AI) applications have exposed limitations due to heavy memory access, with the von Neumann computing architecture. The parallel in-memory comp... » read more

FeFETs Bring Promise And Challenges


Ferroelectric FETs (FeFETs) and memory (FeRAM) are generating high levels of interest in the research community. Based on a physical mechanism that hasn’t yet been commercially exploited, they join the other interesting new physics ideas that are in various stages of commercialization. “FeRAM is very promising, but it's like all promising memory technologies — it takes a while to get b... » read more