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Self-Aligned Block And Fully Self-Aligned Via For iN5 Metal 2 Self-Aligned Quadruple Patterning


This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, co... » read more

Improving Patterning Yield At The 5nm Semiconductor Node


Engineering decisions are always data-driven. As scientists, we only believe in facts and not in intuition or feelings. At the manufacturing stage, the semiconductor industry is eager to provide data and facts to engineers based upon metrics such as the quantity of wafers produced per hour and sites/devices tested on each of those wafers. The massive quantity of data generated in semiconduct... » read more