tag: gallium nitride

Manufacturing Bits: June 16
By Mark LaPedus - 16 Jun, 2020 - Comments: 0

GaN power modules Gallium-nitride (GaN) devices are emerging in several markets, such as power semiconductors and RF. GaN, a binary III-V compound, is a wide-bandgap technology, meaning it is faster and more efficient than silicon-based devices. GaN has 10 times the breakdown field strength with double the electron mobility than silicon. Generally, some GaN vendors don’t use a traditio... » read more

Power/Performance Bits: April 14
By Jesse Allen - 14 Apr, 2020 - Comments: 0

Undoped polymer ink Researchers at Linköping University, Chalmers University of Technology, University of Washington, University of Cologne, Chiba University, and Yunnan University developed an organic ink for printable electronics that doesn't need to be doped for good conductivity. "We normally dope our organic polymers to improve their conductivity and the device performance. The proces... » read more

Power/Performance Bits: Jan. 7
By Jesse Allen - 07 Jan, 2020 - Comments: 0

Ferroelectric FET Researchers at Purdue University developed a ferroelectric transistor capable of both processing and storing information. The ferroelectric semiconductor field-effect transistor is made of alpha indium selenide, which overcomes the problem of ferroelectric materials not interfacing well with silicon. “We used a semiconductor that has ferroelectric properties. This way tw... » read more

Power/Performance Bits: Dec. 23
By Jesse Allen - 23 Dec, 2019 - Comments: 0

High mobility transistor Engineers at the University of Delaware created a high-electron mobility transistor, a device that amplifies and controls electrical current, using gallium nitride (GaN) with indium aluminum-nitride as the barrier on a silicon substrate. Among devices of its type, the team says their transistor has record-setting properties, including record low gate leakage current... » read more

RF GaN Gains Steam
By Mark LaPedus - 21 Nov, 2019 - Comments: 0

Wide-bandgap semiconductors are hot topics these days. One wide-bandgap semi type--silicon carbide (SiC)--is the talk of the town and is gaining steam in electric vehicles and other systems. But let’s not forget about gallium nitride (GaN). GaN, a binary III-V material, has 10 times the breakdown field strength with double the electron mobility than silicon. GaN is used for LEDs, power ... » read more

Power Semi Wars Begin
By Mark LaPedus - 23 Oct, 2019 - Comments: 1

Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market. Power semiconductors are specialized transistors that incorporate different and competitive technologies like GaN, SiC and silicon. Power semis operate as a switch in high-volt... » read more

GaN Versus Silicon For 5G
By Kevin Fogarty - 15 Aug, 2019 - Comments: 0

The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

Wide Band Gap—The Revolution In Power Semiconductors
By Applied Materials - 17 Jul, 2019 - Comments: 0

New government regulations and industry standards are leading companies to adopt wide bandgap (WBG) power solutions, both to reduce their carbon footprint and to meet increasing demand for higher power systems aimed at electric vehicles, renewable energy, datacenters, and other markets. The automotive industry is one of the biggest markets driving demand for WBG power devices. The European U... » read more

SiC Demand Growing Faster Than Supply
By Mark LaPedus - 23 May, 2019 - Comments: 2

The silicon carbide (SiC) industry is in the midst of a major expansion campaign, but suppliers are struggling to meet potential demand for SiC power devices and wafers in the market. In just one example of the expansion efforts, Cree plans to invest up to $1 billion to increase its SiC fab and wafer capacities. As part of the plan, Cree is developing the world’s first 200mm (8-inch) SiC f... » read more

System Bits: April 30
By Jeff Dorsch - 30 Apr, 2019 - Comments: 0

Future batteries could use a graphene sponge Researchers at Sweden’s Chalmers University of Technology devised a porous, sponge-like aerogel, made of reduced-graphene oxide, to serve as a freestanding electrode in the battery cell. This utilization has the potential to advance lithium sulfur batteries, which are said to possess a theoretical energy density about five times greater than lithi... » read more

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