One-On-One: Mark Bohr

By Mark LaPedus - 18 Sep, 2014 - Comments: 1

Semiconductor Engineering sat down to discuss process technology, transistor trends, chip-packaging and other topics with Mark Bohr, a senior fellow and director of process architecture and integration at Intel. SE: Intel recently introduced chips based on its new 14nm process. Can you briefly describe the 14nm process? Bohr: It’s our second-generation, tri-gate technology. So it has al... » read more

Will 7nm And 5nm Really Happen?

By Mark LaPedus - 14 Jul, 2014 - Comments: 2

Today’s silicon-based finFETs could run out of steam at 10nm. If or when chipmakers move beyond 10nm, IC vendors will require a new transistor architecture. III-V finFETs, gate-all-around FETs, quantum well finFETs, SOI finFETs and vertical nanowires are just a few of the future transistor candidates at 7nm and 5nm. Technically, it’s possible to manufacture the transistor portions of the... » read more

Will 7nm And 5nm Really Happen?

By Mark LaPedus - 19 Jun, 2014 - Comments: 11

As leading-edge chipmakers continue to ramp up their 28nm and 20nm devices, vendors are also updating their future technology roadmaps. In fact, IC makers are talking about their new shipment schedules for 10nm. And GlobalFoundries, Intel, Samsung and TSMC are narrowing down the options for 7nm, 5nm and beyond. There is a high probability that IC makers can scale to 10nm, but vendors face a ... » read more

Atomic Layer Etch Finally Emerges

By Mark LaPedus - 15 May, 2014 - Comments: 1

The migration towards finFETs and other devices at the 20nm node and beyond will require a new array of chip-manufacturing technologies. Multiple patterning, hybrid metrology and newfangled interconnect schemes are just a few of the technologies required for future scaling. In addition, the industry also will require new techniques that can process structures at the atomic level. For example... » read more

The Search For The Next Transistor

By Mark LaPedus - 20 Feb, 2014 - Comments: 3

In the near term, the leading-edge chip roadmap looks fairly clear. Chips based on today’s finFETs and planar fully depleted silicon-on-insulator (FDSOI) technologies are expected to scale down to the 10nm node. But then, the CMOS roadmap becomes foggy at 7nm and beyond. The industry has been exploring a number of next-generation transistor candidates, but suddenly, a few technologies are ... » read more

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tag: gate-all-around FETs

One-On-One: Mark Bohr

Will 7nm And 5nm Really Happen?

Will 7nm And 5nm Really Happen?

Atomic Layer Etch Finally Emerges

The Search For The Next Transistor