Scalable Fabrication of Graphene FETs on Non-Planar Surfaces (Imperial College London)


A new technical paper titled "Fabrication of graphene field effect transistors on complex non-planar surfaces" was published by researchers at Imperial College London. Abstract "Graphene field effect transistors (GFETs) are promising devices for biochemical sensing. Integrating GFETs onto complex non-planar surfaces could uncap their potential in emerging areas of wearable electronics, such... » read more

Large-Scale VFETs With Ultra-Short Channel Length And High Performance


A new technical paper titled "Large-scale sub-5-nm vertical transistors by van der Waals integration" was published by researchers at Hunan University. "Here, we demonstrate a layer-by-layer transfer process of large-scale indium gallium zinc oxide (IGZO) semiconductor arrays and metal electrodes, and realize large-scale VFETs with ultra-short channel length and high device performance," sta... » read more

2D UltraLow Temperatures, High Performance Quantum


A new technical paper titled "Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures" was published by researchers at EPFL and National Institute for Materials Science (Japan). Abstract "The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. ... » read more

Interconnects: Criteria For Alternative Metal Benchmarking And Selection (Imec, KU Leuven)


A technical paper titled “Selecting Alternative Metals for Advanced Interconnects” was published by researchers at imec and KU Leuven. Abstract “Today, interconnect resistance and reliability are key limiters for the performance of advanced CMOS circuits. As transistor scaling is slowing, interconnect scaling has become the main driver for circuit miniaturization, and interconnect lim... » read more

Properties of Commercially Available Hexagonal Boron Nitride Grown By The CVD Method


A new technical paper titled "On the quality of commercial chemical vapour deposited hexagonal boron nitride" was published by researchers at KAUST and the National Institute for Materials Science in Japan. Abstract "The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with sm... » read more

Band-To-Band Tunneling And Negative Differential Resistance in Heterojunctions Built Entirely Using 2D Materials


A technical paper titled "Electrical characterization of multi-gated WSe2 /MoS2 van der Waals heterojunctions" was published by researchers at Helmholtz-Zentrum Dresden Rossendorf (HZDR), TU Dresden, National Institute for Materials Science (Japan) and NaMLab gGmbH. Abstract "Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the pr... » read more

Research Bits: Feb. 27


Phonon-magnon reservoir Researchers from TU Dortmund, Loughborough University, V. E. Lashkaryov Institute of Semiconductor Physics, and University of Nottingham were inspired by the human eye to propose an on-chip phonon-magnon reservoir for neuromorphic computing. In reservoir computing, input signals are mapped into a multidimensional space, which is not trained and only expedites recogni... » read more

New Metasurface Architecture To Deliver Ultrafast Information Processing And Versatile Terahertz Sources


A technical paper titled “Light-driven nanoscale vectorial currents” was published by researchers at Los Alamos National Laboratory, Menlo Systems, University of California Davis, Columbia University, Sandia National Laboratories, and Intellectual Ventures. Abstract: "Controlled charge flows are fundamental to many areas of science and technology, serving as carriers of energy and informa... » read more

Heterogeneous Integration of Graphene and Hafnium Oxide Memristors Using Pulsed-Laser Deposition


A technical paper titled “Heterogeneous Integration of Graphene and HfO2 Memristors” was published by researchers at Forschungszentrum Jülich, Jožef Stefan Institute, and Jülich-Aachen Research Alliance (JARA-FIT). Abstract: "The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electro... » read more

Research Bits: Jan. 8


High mobility graphene Researchers at the Georgia Institute of Technology and Tianjin University created a functional semiconductor made from graphene that is compatible with conventional microelectronics processing methods. "We now have an extremely robust graphene semiconductor with 10 times the mobility of silicon, and which also has unique properties not available in silicon," said Walt... » read more

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