Power/Performance Bits: Dec. 13


3D porous microsupercapacitors A research team from the King Abdullah University of Science and Technology (KAUST) developed an integrated microsupercapacitor targeted at self-powered system applications where the power source may be intermittent, such as sensors for wearables, security, and structural health monitoring. The key to the microsupercapacitors is vertically-scaled three-dimen... » read more

Power/Performance Bits: Oct. 18


Speeding up memory with T-rays Scientists at the Moscow Institute of Physics and Technology (MIPT), the University of Regensburg in Germany, Radboud University Nijmegen in the Netherlands, and Moscow Technological University proposed a way to improve the performance of memory through using T-waves, or terahertz radiation, as a means of resetting memory cells. This process is several thousand... » read more

Power/Performance Bits: Aug. 30


Scalable data center chip Princeton University researchers designed a new scalable chip specifically for data centers and massive computing systems. The team believes the chip, called Piton, can substantially increase processing speed while slashing energy needs. The chip architecture is scalable; designs can be built that go from a dozen cores to several thousand. Also, the architecture ... » read more

Power/Performance Bits: July 26


Flexible MRAM Researchers from the National University of Singapore, Yonsei University, Ghent University and Singapore's Institute of Materials Research and Engineering embedded a magnetic memory chip on a plastic material, flexible enough to be bent into a tube. The new device operates on magnetoresistive random access memory (MRAM), which uses a magnesium oxide (MgO)-based magnetic tunn... » read more

Power/Performance Bits: May 31


Solar thermophotovoltaics A team of MIT researchers demonstrated a device based on a method that enables solar cells to break through a theoretically predicted ceiling on how much sunlight they can convert into electricity. Since 1961 it has been known that there is an absolute theoretical limit, called the Shockley-Queisser Limit, to how efficient traditional solar cells can be in their ... » read more

Power/Performance Bits: May 17


Shrinking perovskites Researchers from Imperial College London, Oxford University, Diamond Light Source, Pohang University of Science and Technology in Korea, and Rutgers University have discovered a material that can be chemically tailored to either expand or contract in a precise way and over a wide temperature range. This could lead to new composite materials that do not expand when heate... » read more

Next EUV Challenge: Pellicles


Extreme ultraviolet (EUV) lithography is still not ready for high-volume manufacturing, but the technology is at least moving in the right direction. Both the [gettech id="31045" comment="EUV"] light source and resists are making noticeable progress, even though there are still challenges in the arena. And then, there is the EUV mask infrastructure, which also has some gaps. “When EUV i... » read more

Manufacturing Bits: March 22


Tunable windows Harvard University has put a new twist on tunable windows. Researchers have devised a new manufacturing technique that can change the opacity of a window. With the flip of a switch, the window can become cloudy, clear or somewhere in the middle. Tunable windows, which aren’t new, rely on electrochemical reactions. Typically, the glass is coated with materials using vacuum... » read more

System Bits: Feb. 23


Making electrons act like liquid While electrical resistance is a simple concept in that rather like friction slowing down an object rolling on a surface, resistance slows the flow of electrons through a conductive material, and now, MIT professor of physics Leonid Levitov and Gregory Falkovich, a professor at Israel’s Weizmann Institute of Science have found that electrons can sometimes tur... » read more

Manufacturing Bits: Feb. 16


Monoxide chips Two-dimensional (2D) materials are gaining steam in the R&D labs. The 2D materials could enable a new class of field-effect transistors (FETs), but the technology isn’t expected to appear until sometime in the next decade. The 2D materials include graphene, boron nitride and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is gaining inter... » read more

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