Hexagonal Boron Nitride Memristors With Nickel Electrodes: Current Conduction Mechanisms & Resistive Switching Behavior (RWTH Aachen)


A new technical paper titled "Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes" was published by researchers at RWTH Aachen University and Peter Gruenberg Institute. Abstract: "The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to i... » read more

Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing


Abstract "The fabrication of integrated circuits (ICs) employing two-dimensional (2D) materials is a major goal of semiconductor industry for the next decade, as it may allow the extension of the Moore’s law, aids in in-memory computing and enables the fabrication of advanced devices beyond conventional complementary metal-oxide-semiconductor (CMOS) technology. However, most circuital demons... » read more