A device design technique for boosting output resistance (Rout) characteristics of long-channel halo-doped nMOSFETs for replacement gate (RMG) high-k/metal gate (HK/MG) devices is proposed based on numerical simulations. We show that the self-aligned halo-compensated channel implant (HCCI) that is carried out after dummy poly gate removal provides compensation for the conventional halo doping. ...
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