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Replacement Gate High-k/Metal Gate nMOSFETs Using A Self-Aligned Halo-Compensated Channel Implant

Mitigate the magnitude of potential drop beyond saturation at the drain end so that the long-channel Rout can be boosted relative to the conventional halo-doped device. Also an improved Vt roll-off behavior was achieved.

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A device design technique for boosting output resistance (Rout) characteristics of long-channel halo-doped nMOSFETs for replacement gate (RMG) high-k/metal gate (HK/MG) devices is proposed based on numerical simulations. We show that the self-aligned halo-compensated channel implant (HCCI) that is carried out after dummy poly gate removal provides compensation for the conventional halo doping. This can be utilized to mitigate the magnitude of potential drop beyond saturation at the drain end so that the long-channel Rout can be boosted relative to the conventional halo-doped device. In addition, we achieve an improved Vt roll-off behavior, an advantage to hot carrier injection (HCI) characteristics at high voltage operation, and the lowered short-channel drain-induced barrier lowering (DIBL) and intrinsic delay via the optimization of the source/drain (S/D) doping profile. HCCI technique can be implemented using a process flow that is compatible with the RMG HK/MG system-on-chip (SoC) technology in the mass production.

Published in: IEEE Transactions on Electron Devices ( Volume: 67, Issue: 6, June 2020)

By Zhi-Cheng Lee, Li-Feng Chin, Kai-Lin Lee, Yao-Chin Cheng, Osbert Cheng, from Advanced Technology Development, Device Division, United Microelectronics Corporation (UMC), Tainan Science Park, Tainan, Taiwan.

Click here to find the article on IEEE Explore.



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