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tag: high-k metal gate

Replacement Gate High-k/Metal Gate nMOSFETs Using A Self-Aligned Halo-Compensated Channel Implant
By UMC - 16 Jun, 2021 - Comments: 0

A device design technique for boosting output resistance (Rout) characteristics of long-channel halo-doped nMOSFETs for replacement gate (RMG) high-k/metal gate (HK/MG) devices is proposed based on numerical simulations. We show that the self-aligned halo-compensated channel implant (HCCI) that is carried out after dummy poly gate removal provides compensation for the conventional halo doping. ... » read more

Foundries Prepare For Battle At 22nm
By Mark LaPedus - 19 Nov, 2018 - Comments: 0

After introducing new 22nm processes over the last year or two, foundries are gearing up the technology for production—and preparing for a showdown. GlobalFoundries, Intel, TSMC and UMC are developing and/or expanding their efforts at 22nm amid signs this node could generate substantial business for applications like automotive, IoT and wireless. But foundry customers face some tough choic... » read more

A New Memory Contender?
By Mark LaPedus - 02 Jan, 2018 - Comments: 1

Momentum is building for a new class of ferroelectric memories that could alter the next-generation memory landscape. Generally, ferroelectrics are associated with a memory type called ferroelectric RAMs (FRAMs). Rolled out by several vendors in the late 1990s, FRAMs are low-power, nonvolatile devices, but they are also limited to niche applications and unable to scale beyond 130nm. While... » read more

The Bumpy Road To 10nm FinFETs
By Mark LaPedus - 21 May, 2015 - Comments: 0

Foundry vendors are currently ramping up their 16nm/14nm [getkc id="185" kc_name="finFET"] processes in the market. Vendors are battling each other for business in the arena, although the migration from planar to finFETs is expected to be a slow and expensive process. Still, despite the challenges at 16nm/14nm, vendors are gearing up for the next battle in the foundry business—the 10nm nod... » read more

Germanium wedge-FETs pry away misfit dislocations
By Katherine Derbyshire - 23 Jan, 2014 - Comments: 1

Any approach to alternative channel integration must consider the lattice mismatch between silicon and other channel materials. Some schemes, such as IMEC’s selective epitaxy, view the lattice mismatch as an obstacle and look for ways to minimize its effects. This point of view certainly has merit: misfit dislocations do significantly degrade transistor performance. Still, back in 2011 Shu-Ha... » read more

The Trouble With FinFETs
By Joanne Itow - 16 Aug, 2012 - Comments: 0

By Joanne Itow The industry’s quest to continue on the semiconductor roadmap defined by Moore’s Law has led to the adoption of a new transistor structure. Whether you call them finFETs, tri-gate or 3D transistors, building these new devices is difficult. But the technology is only half the challenge. In 2002, Chen Ming Hu* spoke at the Semico Summit. The title of his presentation was â€... » read more

Designing into A Foundry Low-Power High-k Metal Gate 28nm CMOS Solution
By Various Writers - 31 Jul, 2012 - Comments: 0

28nm Super Low Power is the low power CMOS offering delivered on a bulk silicon substrate for mobile consumer and digital consumer applications. The 28nm process technology is slated to become the foundation for a new generation of portable electronics that are capable of handling streaming video, data, voice, social networking and mobile commerce applications. To view this white paper, clic... » read more

All Indicators Point North
By Ed Sperling - 28 Jun, 2012 - Comments: 0

Designing and producing chips has always been difficult, but the number of things that conspire to make it harder at 20nm is the longest in the history of the semiconductor industry. The list will grow longer still at 14nm and beyond, not to mention so expensive that one mistake will kill a company. While system engineers and architects look at the challenges on the front end, the problems ... » read more

The Challenges Of 28nm HKMG
By Various Writers - 26 Jun, 2012 - Comments: 0

28nm Super Low Power (28nm-SLP) is the low power CMOS offering delivered on a bulk silicon substrate for mobile consumer and digital consumer applications. This technology has four Vt's (high, regular, low and super low) for design flexibility with multi-channel length capability and offers the ultimate in small die size and low cost. Multiple SRAM bit cells for high density and high-performanc... » read more

How Long Will 28nm Last?
By Ed Sperling - 12 Jan, 2012 - Comments: 0

By Ann Steffora Mutschler As soon as a next generation semiconductor manufacturing process node is out, bets are taken on just how long the current advanced process node will last. The 28/20nm transition is no exception. There is certainly a benefit to moving from 40nm to 28nm. The  availability of high-k/metal gate technology offers quite a few advantages in terms of power reduction... » read more

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