Demonstrating A Fully-2D-Material Based Device For Temperature Sensing In Cryogenic Regimes


A technical paper titled “I-V-T Characteristics and Temperature Sensor Performance of a Fully-2D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures” was published by researchers at Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research, and National Institute for Materials Science. Abstract: "In this work, we demonstrate the usability of a fully-2D-mat... » read more

System Bits: Sept. 2


Thinnest semiconductor A team of researchers from the University of Washington, the University of Hong Kong and the University of Warwick have demonstrated that two single-layer semiconductor materials can be connected in an atomically seamless fashion known as a heterojunction, which they expect could be the basis for next-generation flexible and transparent computing, better light-emitting d... » read more