Properties of Commercially Available Hexagonal Boron Nitride Grown By The CVD Method

A new technical paper titled "On the quality of commercial chemical vapour deposited hexagonal boron nitride" was published by researchers at KAUST and the National Institute for Materials Science in Japan. Abstract "The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with sm... » read more

A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge

A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

Antenna For Nanoscale Light Source By Placing The TMD Outside The Tunnelling Pathway

A technical paper titled "Exciton-assisted electron tunnelling in van der Waals heterostructures" was published by researchers at ETH Zürich, The Barcelona Institute of Science and Technology, Swiss Federal Laboratories for Materials Science and Technology, National Institute for Materials Science, University of Basel, and Institució Catalana de Recerca i Estudis Avançats (ICREA). Abstract:... » read more

Hexagonal Boron Nitride Memristors With Nickel Electrodes: Current Conduction Mechanisms & Resistive Switching Behavior (RWTH Aachen)

A new technical paper titled "Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes" was published by researchers at RWTH Aachen University and Peter Gruenberg Institute. Abstract: "The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to i... » read more

Large Area Synthesis of 2D Material Hexagonal Boron Nitride, Improving Device Characteristics of Graphene

A new technical paper titled "Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays" was published by researchers at Kyushu University, National Institute of Advanced Industrial Science and Technology (AIST), and Osaka University. Abstract "Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical properti... » read more

2D Semiconductor Materials Creep Toward Manufacturing

As transistors scale down, they need thinner channels to achieve adequate channel control. In silicon, though, surface roughness scattering degrades mobility, limiting the ultimate channel thickness to about 3nm. Two-dimensional transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are attractive in part because they avoid this limitation. With no out-of-plane dangling bonds and at... » read more

Research Bits: April 5

Creating qubits in bulk Researchers from Intel and QuTech, an institute of the Delft University of Technology and the Netherlands Organisation for Applied Scientific Research (TNO), built a qubit using standard semiconductor manufacturing facilities. The qubit is based on the spin of single electrons that are captured in a silicon nanoscale device, which resembles conventional transistors. ... » read more

Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing

Abstract "The fabrication of integrated circuits (ICs) employing two-dimensional (2D) materials is a major goal of semiconductor industry for the next decade, as it may allow the extension of the Moore’s law, aids in in-memory computing and enables the fabrication of advanced devices beyond conventional complementary metal-oxide-semiconductor (CMOS) technology. However, most circuital demons... » read more

Power/Performance Bits: Aug. 9

Capacitors in interposers Scientists at Tokyo Institute of Technology developed a 3D functional interposer containing an embedded capacitor. They tout the design as saving package area and reducing wiring length, resulting in less noise and power consumption. The capacitive elements are embedded inside a 300mm silicon piece using permanent adhesive and mold resin. The interconnects between ... » read more

Power/Performance Bits: Feb. 25

Thinner, flexible touchscreens Researchers from RMIT University, University of New South Wales, and Monash University developed a thin, flexible electronic material for touchscreens. The material is 100 times thinner than current touchscreen materials. The new screens are still based on indium-tin oxide (ITO), a common touchscreen material. However, a liquid metal printing approach was used... » read more