Week In Review: Manufacturing, Test


Fab tools, chips and technologies What happened at the SEMI Industry Strategy Symposium (ISS) this week? The annual three-day conference of executives gave the year’s first comprehensive outlook of the global electronics manufacturing industry. Click here to see the details. CyberOptics has unveiled its new WaferSense Auto Resistance Sensor (ARS) and its CyberSpectrum software. The produc... » read more

Manufacturing Bits: Jan. 7


Beyond 5G chips At the recent IEEE International Electron Devices Meeting (IEDM), NTT and the Tokyo Institute of Technology presented a paper on a technology that could enable high-speed wireless devices beyond the 5G standard. Researchers have devised a 300GHz wireless transceiver (TRx) that supports a data rate of more than 100Gb/s. The device is based on a technology called indium phosph... » read more

Manufacturing Bits: Dec. 31


GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

Where Technology Breakthroughs Are Needed


After years of delays, extreme ultraviolet (EUV) lithography is finally in production at the 7nm logic node with 5nm in the works. EUV, a next-generation lithography technology, certainly will help chipmakers migrate to the next nodes. But EUV doesn’t solve every problem. Nor does it address all challenges in the semiconductor industry. Not by a long shot. To be sure, the industry needs... » read more

Manufacturing Bits: Dec. 16


Imec-Leti alliance At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Leti announced plans to collaborate in select areas. The two R&D organizations plan to collaborate in two areas—artificial intelligence (AI) and quantum computing. Imec and Leti have been separately working on AI technologies based on various next-generation memory architectures. Both entitie... » read more

Building An MRAM Array


MRAM is gaining traction in a variety of designs as a middle-level type of memory, but there are reasons why it took so long to bring this memory to market. A typical magnetoresistive RAM architecture is based on CoFeB magnetic layers, with an MgO tunneling barrier. The reference layer should have zero net magnetization to make sure that it doesn’t influence the orientation of the free lay... » read more

Week In Review: Manufacturing, Test


Fab tools A consortium of 31 companies have launched a new project, called the “Advanced packaging for photonics, optics and electronics for low cost manufacturing in Europe.” The program is referred to as APPLAUSE. With a budget of 34 million euros, the project is being coordinated by ICOS, a division of KLA. “APPLAUSE will focus on advanced optics, photonics and electronics packagin... » read more

In-Memory Computing Challenges Come Into Focus


For the last several decades, gains in computing performance have come by processing larger volumes of data more quickly and with superior precision. Memory and storage space are measured in gigabytes and terabytes now, not kilobytes and megabytes. Processors operate on 64-bit rather than 8-bit chunks of data. And yet the semiconductor industry’s ability to create and collect high quality ... » read more

Quantum Issues And Progress


Quantum computing is showing significant promise, and research is beginning to move from the earliest stages to a deeper understanding of what works best commercially and why. On paper, quantum computing algorithms are potentially revolutionary. They suggest a way to solve some problems more quickly and more accurately than conventional computers ever could. But out in the real world of prac... » read more

Manufacturing Bits: Jan. 2


Better nanowire MOSFETs At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Applied Materials presented a paper on a new and improved way to fabricate vertically stacked gate-all-around MOSFETs. More specifically, Imec and Applied reported on process improvements for a silicon nanowire MOSFET, which is integrated in a CMOS dual work function metal replacement metal ga... » read more

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