Detection Of Contaminants In Positive And Negative Ion Mode Using In-line SIMS With An Oxygen Primary Ion Beam


Utilizing Secondary Ion Mass Spectrometry (SIMS) for in-line metrology is a newly emerging method of process control that requires contamination-free measurements, enabling SIMS on product wafers. SIMS measurements of negative ions are usually associated with a Cesium primary ion beam. Unfortunately, when Cesium is present in Silicon, it forms trap states in the Si band gap, which can cause ser... » read more

Metrology Sampling Plans Are Key For Device Analytics And Traceability


A mother steps on the brakes, bringing her car to a stop as she drops her kids off for dance lessons. At the time, she doesn't notice anything wrong, but when she takes her car in for its regular service appointment, the mechanic conducts a diagnostic check and discovers that the primary brake system on the car had failed because of a faulty braking controller without anyone realizing it. Fortu... » read more

Optical Metrology Solutions For 10nm Films Process Control Challenges


By Sridhar Mahendrakar (a), Alok Vaida (a), Kartik Venkataraman (b), Michael Lenahan (a), Steven Seipp (a), Fang Fanga (a), Shweta Saxena (a), Dawei Hu (b), Nam Hee Yoon (b), Da Song (b), Janay Camp (b), Zhou Ren (b). [a: GlobalFoundries; b:KLA-Tencor] Controlling thickness and composition of gate stack layers in logic and memory devices is critical to ensure transistor performance meets r... » read more