Author's Latest Posts


Advanced Defect Inspection Techniques For nFET And pFET Defectivity At 7nm Gate Poly Removal Process


By Ian Tolle, GlobalFoundries, and Michael Daino, KLA-Tencor During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain are not sufficiently protected, the etch can damage the active region and render the FET inoperative. Different materials are used in t... » read more

Spectral Tunability For Accuracy, Robustness And Resilience


In overlay (OVL) metrology the quality of measurements and the resulting reported values depend heavily on the measurement setup used. For example, in scatterometry OVL (SCOL) metrology a specific target may be measured with multiple illumination setups, including several apodization options, two possible laser polarizations, and multiple possible laser wavelengths. Not all possible setups a... » read more

High-Volume Manufacturing Device Overlay Process Control


By Honggoo Leea, Sangjun Hana, Jaeson Wooa, DongYoung Leea, ChangRock Songa, Hoyoung Heob, Irina Brinsterb, DongSub Choic, John C. Robinsonb aSK Hynix, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, 467-701, Korea bKLA-Tencor Corp., 8834 N. Capital of Texas Hwy, Austin, TX 78759 cKLA-Tencor Korea, Starplaza bldg.., 53 Metapolis-ro, Hwasung City, Gyeonggi-do, Korea Abstract ... » read more

Innovative Scalable Design-Based Care Area Methodology For Defect Monitoring In Production


By Ian Tolle, GlobalFoundries, and Ankit Jain, KLA-Tencor Abstract The use of design-based care areas on inspection tools [1, 2] to characterize defects has been well established in recent years. However, the implementation has generally been limited to specific engineering use cases, due to the complexity involved with care area creation and inspection recipe setup. Furthermore, creating, ... » read more

Criticality of Wafer Edge Inspection and Metrology Data to All-Surface Defectivity Root Cause and Yield Analysis


Abstract As device sizes continue to increase on devices at 2x nm design rule and beyond and high wafer stress is worsening due to multi-film stacking in the vertical memory process, we observe an increasing trend in edge yield issues worldwide. Wafer edge inspection and metrology become thus critical to drive root cause analysis for improving the yield during a new technology ramp. Nowadays, ... » read more

EUV Reticle Print Verification With Advanced Broadband Optical Wafer Inspection And e-Beam Review Systems


As the Extreme Ultraviolet (EUV) lithography ecosystem is being actively mapped out to enable sub-7nm design rule devices, there is an immediate and imperative need to identify the EUV reticle (mask) inspection methodologies. The introduction of additional particle sources due to the vacuum system and potential growth of haze defects or other film or particle depositions on the reticle, in comb... » read more

Understanding Process And Design Systematics


As design rules shrink, semiconductor manufacturing becomes more complex which leads to a huge increase in the defects which could cause a non-yielding die. Process control and inline defect analysis becomes widely relevant to help shorten the learning process from R&D to production. This paper discusses the various methodologies which leverage patterned wafer inspection tools to help analyze d... » read more

Nontraditional Post Develop Inspection And Review Strategy For Via Defects


A viable in-line monitor for missing vias in the back end of line (BEOL) has traditionally been challenging due to the nature of the defects. Today’s available solutions do not meet the requirements of a true in-line and at-level monitor strategy. These solutions either indirectly monitor the defect further down the line, put production at risk of damage or contamination due to exceeding stri... » read more

Accuracy In Optical Overlay Metrology


By Barak Bringoltz, Tal Marciano, Tal Yaziv, Yaron DeLeeuw, Dana Klein, Yoel Feler, Ido Adam, Evgeni Gurevich, Noga Sella, Ze’ev Lindenfeld, Tom Leviant, Lilach Saltoun, Eltsafon Ashwal, Dror Alumot and Yuval Lamhot, Xindong Gao, James Manka, Bryan Chen, and Mark Wagner. Abstract In this paper we discuss the mechanism by which process variations determine the overlay accuracy of optical m... » read more

Highly Sensitive Focus Monitoring Technique Based On Illumination And Target Co-Optimization


By Myungjun Lee, Mark D. Smith, Pradeep Subrahmanyan, and Ady Levy. Abstract We present a cost-effective focus monitoring technique based on the illumination and the target co-optimization. An advanced immersion scanner can provide the freeform illumination that enables the use of any kind of custom source shape by using a programmable array of thousands of individually adjustable micro-mi... » read more

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