Author's Latest Posts


Yield Impact For Wafer Shape Misregistration-Based Binning For Overlay APC Diagnostic Enhancement


By David Jayez, Kevin Jock, Yue Zhou and Venugopal Govindarajulu of GlobalFoundries, and Zhen Zhang, Fatima Anis, Felipe Tijiwa-Birk and Shivam Agarwal of KLA. 1. ABSTRACT The importance of traditionally acceptable sources of variation has started to become more critical as semiconductor technologies continue to push into smaller technology nodes. New metrology techniques are needed to pur... » read more

Clean Focus, Dose And CD Metrology For CD Uniformity Improvement


Authors: Honggoo Leea, Sangjun Hana, Minhyung Honga, Seungyong Kima, Jieun Leea, DongYoung Leea, Eungryong Oha, Ahlin Choia, Nakyoon Kimb, John C. Robinsonc, Markus Mengelc, Pablo Rovirac, Sungchul Yooc, Raphael Getinc, Dongsub Choib, Sanghuck Jeonb aSK Hynix, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, 467-701, Korea bKLA-Tencor Korea, Starplaza bldg., 53 Metapolis-ro, Hwasung... » read more

Improved Accuracy And Robustness For Advanced DRAM With Tunable Multi-Wavelength Imaging Scatterometry Overlay Metrology


By Honggoo Lee, Sangjun Han, Minhyung Hong, Jieun Lee, Dongyoung Lee, Ahlin Choi and Chanha Park of SK Hynix, and Dohwa Lee, Seongjae Lee, Jungtae Lee, Jeongpyo Lee, DongSub Choi, Sanghuck Jeon, Zephyr Liu, Hao Mei, Tal Marciano, Eitan Hajaj, Lilach Saltoun, Dana Klein, Eran Amit, Anna Golotsvan, Wayne Zhou, Eitan Herzl, Roie Volkovich and John C. Robinson of KLA. Abstract Overlay process c... » read more

Fast Local Registration Measurements For Efficient E-beam Writer Qualification And Correction


By Klaus-Dieter Roeth, Hendrik Steigerwald, Runyuan Han, Oliver Ache, Frank Laske (KLA-Tencor MIE GmbH, Germany) Abstract Mask data are presented which demonstrate local registration errors that can be correlated to the writing swathes of state-of-the-art e-beam writers and multi-pass strategies, potentially leading to systematic device registration errors versus design of close to 2nm. Fur... » read more

Comparative Stochastic Process Variation Bands For N7, N5, And N3 At EUV


By Alessandro Vaglio Preta, Trey Gravesa, David Blankenshipa, Kunlun Baib, Stewart Robertsona, Peter De Bisschopc, John J. Biaforea a) KLA-Tencor Corporation, Austin, TX 78759, U.S.A. b) KLA-Tencor Corporation, Milpitas, CA 95035, U.S.A. c) IMEC, Kapeldreef 75, 3000, BE ABSTRACT Stochastics effects are the ultimate limiter of optical lithography technology and are a major concern for n... » read more

Correlation Study of Actual Temperature Profile and In-line Metrology Measurements for Within-Wafer Uniformity Improvement and Wafer Edge Yield Enhancement


Authors: Fang Fang (a), Alok Vaid (a), Alina Vinslava (a), Richard Casselberry (a), Shailendra Mishra (a), Dhairya Dixit (a), Padraig Timoney (a), Dinh Chu (b), Candice Porter (b), Da Song (b), Zhou Ren (b) Key: (a) GLOBALFOUNDRIES, 400 Stone Break Extension, Malta, NY 12020; (b) KLA-Tencor Corporation, One Technology Drive, Milpitas, CA 95035   ABSTRACT With advances in new techn... » read more

In-Cell Overlay Metrology By Using Optical Metrology Tool


By Honggoo Lee, Sangjun Han, Minhyung Hong, Seungyong Kima, Jieun Lee, DongYoung Leea, Eungryong Oh, and Ahlin Choi of SK Hynix, and Hyowon Park, Waley Liang, DongSub Choi, Nakyoon Kim, Jeongpyo Lee, Stilian Pandev, Sanghuck Jeon, John C. Robinson of KLA-Tencor Abstract Overlay is one of the most critical process control steps of semiconductor manufacturing technology. A typical advanced s... » read more

Advanced Defect Inspection Techniques For nFET And pFET Defectivity At 7nm Gate Poly Removal Process


By Ian Tolle, GlobalFoundries, and Michael Daino, KLA-Tencor During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain are not sufficiently protected, the etch can damage the active region and render the FET inoperative. Different materials are used in t... » read more

Spectral Tunability For Accuracy, Robustness And Resilience


In overlay (OVL) metrology the quality of measurements and the resulting reported values depend heavily on the measurement setup used. For example, in scatterometry OVL (SCOL) metrology a specific target may be measured with multiple illumination setups, including several apodization options, two possible laser polarizations, and multiple possible laser wavelengths. Not all possible setups a... » read more

High-Volume Manufacturing Device Overlay Process Control


By Honggoo Leea, Sangjun Hana, Jaeson Wooa, DongYoung Leea, ChangRock Songa, Hoyoung Heob, Irina Brinsterb, DongSub Choic, John C. Robinsonb aSK Hynix, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, 467-701, Korea bKLA-Tencor Corp., 8834 N. Capital of Texas Hwy, Austin, TX 78759 cKLA-Tencor Korea, Starplaza bldg.., 53 Metapolis-ro, Hwasung City, Gyeonggi-do, Korea Abstract ... » read more

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