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Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics


Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669. Find technical paper here. Abstract "In this paper, to solve the epitaxial thickness limit and the high in... » read more