Fabricating FeFET Devices with Silicon-Doped Hafnium Oxide As A Ferroelectric Layer


A new technical paper titled "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications" was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg. Abstract (partial) "This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric... » read more