A new technical paper titled "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications" was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg.
Abstract (partial)
"This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric...
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