Fabricating FeFET Devices with Silicon-Doped Hafnium Oxide As A Ferroelectric Layer


A new technical paper titled “Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications” was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg.

Abstract (partial)

“This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer (IL) engineering and READ-voltage optimization. FeFET devices with silicon dioxide (SiO2) and silicon oxynitride (SiON) as IL were fabricated and characterized. Although the FeFETs with SiO2 interfaces demonstrated better low-frequency characteristics compared to the FeFETs with SiON interfaces, the latter demonstrated better WRITE endurance and retention. Finally, the neuromorphic simulation was conducted to evaluate the performance of FeFETs with SiO2 and SiON IL as synaptic devices.”

Find the open access technical paper here.  Published Oct. 2022.

ACS Appl. Electron. Mater. 2022, 4, 11, 5292–5300
Publication Date:October 27, 2022


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