Overview of ALD-Driven Oxide Semiconductors for High Density, Low Power Memory Architectures (Hanyang Univ., imec)


A new technical paper titled "Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges" was published by researchers a Hanyang University and imec. Abstract "Oxide semiconductors (OSs), introduced by the Hosono group in the early 2000s, have evolved from display backplane materials to promising candidates for advanced memory and logic ... » read more

Emerging Synaptic Memory Technologies For Neuromorphic CIM Platforms (Tampere Univ.)


A new technical paper titled "Toward Capacitive In-Memory-Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware" was published by researchers at Tampere University. Abstract: "The quest for energy-efficient, scalable neuromorphic computing has elevated compute-in-memory (CIM) architectures to the forefront of hardware innovation. While memristive... » read more

Investigation Of Self-Heating Effects on Fe-FinFETs On IMC Applications (TU Munich, IIT, U. Stuttgart)


A new technical paper titled "Investigating Self-Heating Effects in Ferroelectric FinFETs for Reliable In-Memory Computing" was published by researchers at TU Munich, University of Stuttgart and Indian Institute of Technology, Kanpur. Abstract "Ferroelectric (Fe) FET has emerged as a promising candidate for efficient in-memory computing due to its properties, such as non-volatility and lo... » read more

Ambipolar Schottky-based FeFET For Ultrascaled Memory Applications


A new technical paper titled "On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices" was published by researchers at Global TCAD Solutions, Igor Sikorsky Kyiv Polytechnic Institute, INSA Lyon, and NaMLab. "Here, we promote an ambipolar Schottky-based ferroelectric transistor (AS-FeFET) as an alternative design. We demonstr... » read more

Ultra-Low Power CiM Design For Practical Edge Scenarios


A technical paper titled “Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET” was published by researchers at Zhejiang University, University of Notre Dame, Technical University of Munich, Munich Institute of Robotics and Machine Intelligence, and the Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of Zhejiang Province. Abstract: "Compute... » read more

FeFET Memory Encrypted Inside The Storage Array


A new technical paper titled "Embedding security into ferroelectric FET array via in situ memory operation" was published by researchers at Pennsylvania State University, University of Notre Dame, Fraunhofer IPMS, National University of Singapore, and North Dakota State University. Abstract "Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of... » read more

Stacked Ferroelectric Memory Array Comprised Of Laterally Gated Ferroelectric Field-Effect Transistors


A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3  for stacked in-memory computing array” was published by researchers at Samsung Electronics and Sungkyunkwan University. Abstract: "In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfe... » read more

Research Bits: November 6


Fast superatomic semiconductor Researchers from Columbia University created a fast and efficient superatomic semiconductor material based on rhenium called Re6Se8Cl2. Rather than scattering when they come into contact with phonons, excitons in Re6Se8Cl2 bind with phonons to create new quasiparticles called acoustic exciton-polarons. Although polarons are found in many materials, those in Re6Se... » read more

FeFET Multi-Level Cells For In-Memory Computing In 28nm


A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of Technology Kanpur, Fraunhofer IPMS, RPTU Kaiserslautern-Landau, and Technical University of Munich. Abstract: "Advancements in AI led to the emergence of in-memory-computing architectures as a... » read more

Scalable And Compact Multi-Bit CAM Designs Using FeFETs


A technical paper titled “SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search” was published by researchers at Zhejiang University, China, Georgia Institute of Technology, University of California Irvine, Rochester Institute of Technology, University of Notre Dame, and Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of ... » read more

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