tag: FeFET

Ultra-Low Power CiM Design For Practical Edge Scenarios
By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET” was published by researchers at Zhejiang University, University of Notre Dame, Technical University of Munich, Munich Institute of Robotics and Machine Intelligence, and the Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of Zhejiang Province. Abstract: "Compute... » read more

FeFET Memory Encrypted Inside The Storage Array
By Technical Paper Link - 20 Dec, 2023 - Comments: 0

A new technical paper titled "Embedding security into ferroelectric FET array via in situ memory operation" was published by researchers at Pennsylvania State University, University of Notre Dame, Fraunhofer IPMS, National University of Singapore, and North Dakota State University. Abstract "Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of... » read more

Stacked Ferroelectric Memory Array Comprised Of Laterally Gated Ferroelectric Field-Effect Transistors
By Technical Paper Link - 10 Nov, 2023 - Comments: 0

A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3  for stacked in-memory computing array” was published by researchers at Samsung Electronics and Sungkyunkwan University. Abstract: "In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfe... » read more

Research Bits: November 6
By Jesse Allen - 06 Nov, 2023 - Comments: 0

Fast superatomic semiconductor Researchers from Columbia University created a fast and efficient superatomic semiconductor material based on rhenium called Re6Se8Cl2. Rather than scattering when they come into contact with phonons, excitons in Re6Se8Cl2 bind with phonons to create new quasiparticles called acoustic exciton-polarons. Although polarons are found in many materials, those in Re6Se... » read more

FeFET Multi-Level Cells For In-Memory Computing In 28nm
By Technical Paper Link - 19 Oct, 2023 - Comments: 0

A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of Technology Kanpur, Fraunhofer IPMS, RPTU Kaiserslautern-Landau, and Technical University of Munich. Abstract: "Advancements in AI led to the emergence of in-memory-computing architectures as a... » read more

Scalable And Compact Multi-Bit CAM Designs Using FeFETs
By Technical Paper Link - 16 Oct, 2023 - Comments: 0

A technical paper titled “SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search” was published by researchers at Zhejiang University, China, Georgia Institute of Technology, University of California Irvine, Rochester Institute of Technology, University of Notre Dame, and Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of ... » read more

Research Bits: July 18
By Jesse Allen - 18 Jul, 2023 - Comments: 0

Miniaturized ferroelectric FETs Researchers from the University of Pennsylvania, Hanyang University, King Abdulaziz University, King Abdullah University of Science and Technology, and University of Tokyo proposed a new ferroelectric FET (FE-FET) design with improved performance for both computing and memory. The transistor layers the two-dimensional semiconductor molybdenum disulfide (MoS2)... » read more

28nm-HKMG-Based FeFET Devices For Synaptic Applications
By Technical Paper Link - 09 May, 2023 - Comments: 0

A technical paper titled "28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview" was published by researchers at Fraunhofer-Institut für Photonische Mikrosysteme IPMS, Indian Institute of Technology Madras, and GlobalFoundries. Abstract This invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric f... » read more

Ferroelectrics: The Dream Of Negative Capacitance
By Katherine Derbyshire - 15 Dec, 2022 - Comments: 0

Ferroelectrics are getting a serious re-examination, as chipmakers look for new options to maintain drive current. Ferroelectric materials can provide non-volatile memory, serving an important functional gap somewhere between DRAM and flash memory. Indeed, ferroelectrics for memory and 2D channels for transistors were two highlights of the recent IEEE Electron Device Meeting. Ferroelectri... » read more

Fabricating FeFET Devices with Silicon-Doped Hafnium Oxide As A Ferroelectric Layer
By Technical Paper Link - 06 Dec, 2022 - Comments: 0

A new technical paper titled "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications" was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg. Abstract (partial) "This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric... » read more

← Older posts

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy