28nm-HKMG-Based FeFET Devices For Synaptic Applications


A technical paper titled “28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview” was published by researchers at Fraunhofer-Institut für Photonische Mikrosysteme IPMS, Indian Institute of Technology Madras, and GlobalFoundries.

This invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The device under test was fabricated on 300 mm wafers at GlobalFoundries. The fabricated devices demonstrate 103 WRITE-endurance cycles and 104 seconds of data-retention capability at 85 °C. We have also assessed the FeFET-based crossbar array’s performance in system-level applications. The system performance was assessed by simulating the FeFET crossbar array for neuromorphic applications. For datasets from the National Institute of Standards and Technology (MNIST), the crossbar array achieved software-comparable inference accuracy of about 97% using multilayer perceptron (MLP) neural networks.”

Find the technical paper here. Published April 2023.

Raffel, Yannick, Franz Müller, Sunanda Thunder, Masud Rana Sk, Maximilian Lederer, Luca Pirro, Sven Beyer et al. “28 nm high-k-metal gate ferroelectric field effect transistors based synapses-A comprehensive overview.” Memories-Materials, Devices, Circuits and Systems (2023): 100048.

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