tag: HfO2

Enabling Advanced Devices With Atomic Layer Processes
By Katherine Derbyshire - 18 Apr, 2024 - Comments: 2

Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect fabrication at the most advanced nodes. ALD can be speeded up somewhat, but the real shift is the rising value of precise composition and thickness control at the most advanced nodes, which makes the ext... » read more

28nm-HKMG-Based FeFET Devices For Synaptic Applications
By Technical Paper Link - 09 May, 2023 - Comments: 0

A technical paper titled "28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview" was published by researchers at Fraunhofer-Institut für Photonische Mikrosysteme IPMS, Indian Institute of Technology Madras, and GlobalFoundries. Abstract This invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric f... » read more

Ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing
By Technical Paper Link - 21 Apr, 2021 - Comments: 0

Source: AIP Applied Physics Letters, published 2/4/2021.  Evelyn T. Breyer1,  Halid Mulaosmanovic1,  Thomas Mikolajick1,2, and  Stefan Slesazeck1 1Nanoelectronic Materials Laboratory (NaMLab) gGmbH, 01187 Dresden, Germany 2Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany   Technical paper link is here » read more

System Bits: May 3
By Ann Mutschler - 03 May, 2016 - Comments: 0

Neural network synapses In a development that could potentially be used as a basis for the hardware implementation of artificial neural networks, Moscow Institute of Physics and Technology (MIPT) researchers have created prototypes of electronic synapses based on ultra-thin films of hafnium oxide (HfO2). The team made the HfO2-based memristors measuring just 40x40 nm2, which exhibit propert... » read more

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