Possible Uses Narrow For Negative Capacitance FETs


The discovery of a ferroelectric phase in hafnium dioxide (HfO2) has sparked significant interest in opportunities for integration of ferroelectric transistors and memories with conventional CMOS devices. Demonstrations of “negative capacitance” behavior in particular suggest these devices might evade the 60 mV/decade limit on subthreshold swing, thereby improving transistor efficiency. ... » read more

Next-Gen Memory Ramping Up


The next-generation memory market is heating up as vendors ramp a number of new technologies, but there are some challenges in bringing these products into the mainstream. For years, the industry has been working on a variety of memory technologies, including carbon nanotube RAM, FRAM, MRAM, phase-change memory and ReRAM. Some are shipping, while others are in R&D. Each memory type is di... » read more

New Embedded Memories Ahead


The embedded memory market is beginning to heat up, fueled by a new wave of microcontrollers (MCUs) and related chips that will likely require new and more capable nonvolatile memory types. The industry is moving on several different fronts in the embedded memory landscape. On one front, traditional solutions are advancing. On another front, several vendors are positioning the next-generatio... » read more