Chip Industry Technical Paper Roundup: Jan. 23


New technical papers added to Semiconductor Engineering’s library this week. [table id=189 /] More ReadingTechnical Paper Library home » read more

Suitability of FeFET-Based CAM Cells For Storage-Class Memory, Under Junction Temperature Variations


A technical paper titled “Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility” was published by researchers at Fraunhofer Institute for Photonic Microsystems (IPMS) and Indian Institute of Technology Madras (IIT Madras). Abstract: "Hafnium oxide (HfO2)-based ferroelectric fiel... » read more

28nm-HKMG-Based FeFET Devices For Synaptic Applications


A technical paper titled "28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview" was published by researchers at Fraunhofer-Institut für Photonische Mikrosysteme IPMS, Indian Institute of Technology Madras, and GlobalFoundries. Abstract This invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric f... » read more