Research Bits: July 14


Cerebellum-inspired memtransistor Researchers from Northwestern University and University of Illinois at Chicago developed a cerebellum-inspired memtransistor for anomaly detection that ignores expected inputs and rapidly detects unexpected events while using less energy than conventional AI. “Today’s AI is remarkably good at recognizing patterns, but it often spends enormous amounts of... » read more

Research Bits: Oct. 7


Doping oxide insulator improves SiGe conductivity Researchers from TU Wien, Johannes Kepler University Linz, and TU Bergakademie Freiberg manufactured a silicon-germanium (SiGe) transistor using an alternative approach that involves doping the insulating oxide layer to produce a long-range effect that extends into the semiconductor. Called modulation acceptor doping (MAD), the technique ena... » read more

Chip Industry’s Technical Paper Roundup: Dec. 13


New technical papers added to Semiconductor Engineering’s library this week.[table id=70 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us po... » read more

Fabricating FeFET Devices with Silicon-Doped Hafnium Oxide As A Ferroelectric Layer


A new technical paper titled "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications" was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg. Abstract (partial) "This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric... » read more