Research Bits: November 6


Fast superatomic semiconductor Researchers from Columbia University created a fast and efficient superatomic semiconductor material based on rhenium called Re6Se8Cl2. Rather than scattering when they come into contact with phonons, excitons in Re6Se8Cl2 bind with phonons to create new quasiparticles called acoustic exciton-polarons. Although polarons are found in many materials, those in Re6Se... » read more

Chip Industry’s Technical Paper Roundup: October 24


New technical papers added to Semiconductor Engineering’s library this week. [table id=157 /] More Reading Technical Paper Library home » read more

FeFET Multi-Level Cells For In-Memory Computing In 28nm


A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of Technology Kanpur, Fraunhofer IPMS, RPTU Kaiserslautern-Landau, and Technical University of Munich. Abstract: "Advancements in AI led to the emergence of in-memory-computing architectures as a... » read more

Chip Industry’s Technical Paper Roundup: May 16


New technical papers recently added to Semiconductor Engineering’s library: [table id=103 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us... » read more

Deep Learning (DL) Applications In Photomask To Wafer Semiconductor Manufacturing


Published by the eBeam Initiative Member Companies (February 2023), this list of artificial intelligence (AI) systems used by member companies in their semiconductor manufacturing products shows progress. New examples of systems using AI include: image processing and parameter tuning in lithography tool mask metrology system B-SPline Control Point generation tool sem... » read more

Week In Review: Design, Low Power


Arm is expected to list solely on a U.S. stock exchange when it goes public again later this year, forgoing the London Stock Exchange for now, the BBC reports. Global investment banks expect the offering to value the company between $30 billion and $70 billion, according to Bloomberg. Disaggregating chips into specialized processors, memories, and architectures is becoming necessary for cont... » read more

Chip Industry’s Technical Paper Roundup: Dec. 13


New technical papers added to Semiconductor Engineering’s library this week.[table id=70 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us po... » read more

Fabricating FeFET Devices with Silicon-Doped Hafnium Oxide As A Ferroelectric Layer


A new technical paper titled "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications" was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg. Abstract (partial) "This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric... » read more

Chip Industry’s Technical Paper Roundup: Dec. 5


New technical papers added to Semiconductor Engineering’s library this week. [table id=67 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for u... » read more

MAC Operation on 28nm High-k Metal Gate FeFET-based Memory Array with ADC (Fraunhofer IPMS/GF)


A technical paper titled "Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array" was published by researchers at Fraunhofer IPMS and GlobalFoundries. Abstract "This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide Semiconductor (CMOS) and ferroelectric fi... » read more

← Older posts