Device Characteristics of GAA-Structured CMOS and CTFET Under Varying Temperatures

A new technical paper titled "Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application" was published by researchers at National Tsing Hua University and National United University in Taiwan. Abstract "Tunneling field effect transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal oxide semiconductor ... » read more

A Flip-Chip, Co-Packaged With Photodiode, High-speed TIA in 16nm FinFET CMOS

A technical paper titled "A 112-Gb/s —8.2-dBm Sensitivity 4-PAM Linear TIA in 16-nm CMOS With Co-Packaged Photodiodes" was published by researchers at University of Toronto, Alphawave IP, and Huawei Technologies Canada. Abstract: "A flip-chip co-packaged linear transimpedance amplifier (TIA) in 16-nm fin field effect transistor (FinFET) CMOS demonstrating 112-Gb/s four-level pulse-amplitude... » read more

Cross-Shaped Reconfigurable Transistor (CS-RFET) With Flexible Signal Routing

A new technical paper titled "Cross-Shape Reconfigurable Field Effect Transistor for Flexible Signal Routing" was published by researchers at NaMLab gGmbH, École Centrale de Lyon, and TU Dresden. "A detailed comprehensive study of the cross-shape reconfigurable field effect transistor electrical characteristics are presented. The fabricated device demonstrates nearly equal transistor charac... » read more

Isolation Device Solution For Intelligent Power Module (IPM) Drive To Realize High-Accuracy Industrial Equipment In High Noise Environment

As efforts to protect the environment have advanced, the use of inverters in industrial applications and green energy systems have continued to grow rapidly as a way to achieve low-power motor control and reduce power conversion loss. In recent years, this demand has been increasing more and more in relation to Sustainable Development Goals (SDGs). Further improvement in accuracy and downsizing... » read more