A technical paper titled "28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview" was published by researchers at Fraunhofer-Institut für Photonische Mikrosysteme IPMS, Indian Institute of Technology Madras, and GlobalFoundries.
Abstract
This invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric f...
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