Week In Review: Manufacturing, Test


Fab tools A consortium of 31 companies have launched a new project, called the “Advanced packaging for photonics, optics and electronics for low cost manufacturing in Europe.” The program is referred to as APPLAUSE. With a budget of 34 million euros, the project is being coordinated by ICOS, a division of KLA. “APPLAUSE will focus on advanced optics, photonics and electronics packagin... » read more

System Bits: June 4


Thin films for quantum computing Researchers at Los Alamos National Laboratory report their development of two-dimensional tungsten/selenium thin films that can control the emission of single photons, potentially useful in quantum technologies. “Efficiently controlling certain thin-film materials so they emit single photons at precise locations—what’s known as deterministic quantum em... » read more

Manufacturing Bits: May 17


Isolating diamondoids Stanford and the SLAC National Accelerator Laboratory are finding new ways to isolate diamondoids. Diamondoids, which are tiny specks of diamond, are found in petroleum fluids. The smallest diamondoid consists of 10 atoms. A diamondoid weighs less than a billionth of a billionth of a carat. A carat is a unit of mass equal to 200 mg. [caption id="attachment_27544" ... » read more

Power/Performance Bits: Dec. 23


GaN building blocks A team of engineers from Cornell University, the University of Notre Dame, and the semiconductor company IQE created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches. In spite of having many desirable features as a material, GaN is notorious for its defects and reliability issues. So the team zeroed in on device... » read more

Still Waiting For III-V Chips


For years, chipmakers have been searching for an alternative material to replace traditional silicon in the channel for advanced CMOS devices at 7nm and beyond. There’s a good reason, too: At 7nm, silicon will likely run out of steam in the channel. Until recently, chipmakers were counting on III-V materials for the channels, at least for NFET. Compared to silicon, III-V materials provide ... » read more

Power/Performance Bits: Dec. 17


Low-power tunneling transistor to enable high-performance devices To make fast and low-power computing devices possible for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing, a new type of transistor is needed. To this end, researchers at Penn State, the National Institute of Standards and Technology and specialty wafer fo... » read more