Ge-Based Multigate SBFETs Operated In An NDR Mode (TU Wien, JKU)


A new technical paper titled "Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors" was published by researchers at TU Wien and JKU (Johannes Kepler University). Abstract: "The co-integration of negative differential resistance (NDR) and Si-based CMOS technology might be a promising concept for multimode devices and circuits with enhanced performance... » read more

Chip Industry’s Technical Paper Roundup: Nov. 15


New technical papers added to Semiconductor Engineering’s library this week. [table id=63 /] » read more

Using More Germanium In Chips for Energy Efficiency & Achievable Clock Frequencies


A new technical paper titled "Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts" was published by researchers at TU Wien (Vienna University of Technology), Johannes Kepler University, CEA-LETI, and Swiss Federal Laboratories for Materials Science and Technology. Find the technical paper here. Published September 2022. Abstrac... » read more

Power/Performance Bits: May 11


Light-emitting silicon Researchers from the Eindhoven University of Technology, Friedrich-Schiller-Universität Jena, Johannes Kepler University, and Technische Universität München developed a silicon germanium alloy that can emit light, paving the way for a silicon laser that could be integrated for on-chip and chip-to-chip communication. Bulk silicon is extremely inefficient at emitting... » read more