Power/Performance Bits: Jan. 21


Two-layer MRAM Scientists at Tokyo Institute of Technology propose a simpler MRAM construction that could perform faster with less power than conventional memories. The idea relies on unidirectional spin Hall magnetoresistance (USMR), a spin-related phenomenon that could be used to develop MRAM cells with an extremely simple structure. The spin Hall effect leads to the accumulation of elect... » read more

Determining What Really Needs To Be Secured In A Chip


Semiconductor Engineering sat down to discuss what's needed to secure hardware and why many previous approaches have been unsuccessful, with Warren Savage, research scientist in the Applied Research Laboratory for Intelligence and Security at the University of Maryland; Neeraj Paliwal, vice president and general manager of Rambus Security; Luis Ancajas, marketing director for IoT security softw... » read more