Research Bits: June 9


InGaOx GAA transistor Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving transistor reliability. "We wanted our crystalline oxide transistor to feature a 'gate-all-around' structure, whereby the gate, which turns the current on or off, surrounds t... » read more

Lowering The Computational Cost of Simulation (DOE, Princeton)


A technical paper titled “Accuracy of the explicit energy-conserving particle-in-cell method for under-resolved simulations of capacitively coupled plasma discharges” was published by researchers at Princeton University. Abstract: "The traditional explicit electrostatic momentum-conserving particle-in-cell algorithm requires strict resolution of the electron Debye length to deliver numeri... » read more