tag: KIST

Potential Of 2D Semi-Metallic PtSe2 As Source/Drain Contacts For 2D Material FETs
By Technical Paper Link - 13 Aug, 2024 - Comments: 0

A technical paper titled “Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts” was published by researchers at Yonsei University, Korea Advanced Institute of Science and Technology (KAIST), Lincoln University College, Korea Institute of Science and Technology (KIST), and Ewha Womans University. Abstract: "In this ... » read more

Chip Industry Week In Review
By The SE Staff - 08 Mar, 2024 - Comments: 0

By Adam Kovac, Gregory Haley, and Liz Allan. Cadence plans to acquire BETA CAE Systems for $1.24 billion, the latest volley in a race to sell multi-physics simulation and analysis across a broad set of customers with deep pockets. Cadence said the deal opens the door to structural analysis for the automotive, aerospace, industrial, and health care sectors. Under the terms of the agreement, 6... » read more

Demonstrating A 2D–0D Hybrid Optical Multi-Level Memory Device Operated By Laser Pulses
By Technical Paper Link - 11 Jan, 2024 - Comments: 0

A technical paper titled “Probing Optical Multi-Level Memory Effects in Single Core–Shell Quantum Dots and Application Through 2D-0D Hybrid Inverters” was published by researchers at Korea Institute of Science and Technology (KIST), Korea University, Daegu Gyeongbuk Institute of Science and Technology (DGIST), National Institute for Materials Science (Japan), and University of Science and... » read more

Research Bits: Dec. 18
By Jesse Allen - 18 Dec, 2023 - Comments: 0

Stacking 2D layers for AI processing Researchers from Washington University in St. Louis, MIT, Yonsei University, Inha University, Georgia Institute of Technology, and the University of Notre Dame demonstrated monolithic 3D integration of layered 2D material, creating a novel AI processing hardware that integrates sensing, signal processing, and AI computing functions into a single chip. Th... » read more

Research Bits: Oct. 4
By Jesse Allen - 04 Oct, 2022 - Comments: 0

2D electrode for ultra-thin semiconductors Researchers from the Korea Institute of Science and Technology (KIST), Japan's National Institute for Materials Science, and Kunsan National University designed two-dimensional semiconductor-based electronic and logic devices, with electrical properties that can be selectively controlled through a new 2D electrode material, chlorine-doped tin diseleni... » read more

Split-Gate FETs (SG-FETs)
By Technical Paper Link - 21 Jul, 2022 - Comments: 0

This technical paper titled "Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications" was published by researchers at Department of Electrical and Computer Engineering, Inha University (South Korea) and Korea Institute of Science and Technology (KIST), Seoul. Abstract "Two-dimensional (2D) materials have been extensively adopted in variou... » read more

Power/Performance Bits: Sept. 15
By Jesse Allen - 15 Sep, 2020 - Comments: 0

Higher-res lidar Researchers from Purdue University and École Polytechnique Fédérale de Lausanne (EPFL) devised a way to improve lidar and provide higher-resolution detection of nearby fast-moving objects through mechanical control and modulation of light on a silicon chip. "Frequency modulated continuous wave" (FMCW) lidar detects objects by scanning laser light from the top of a vehicl... » read more

Will Self-Heating Stop FinFETs
By Katherine Derbyshire - 20 Apr, 2017 - Comments: 0

New transistor designs and new materials don’t appear out of thin air. Their adoption always is driven by the limitations of the incumbent technology. Silicon germanium and other compound semiconductors are interesting because they promise superior carrier mobility relative to silicon. [getkc id="185" kc_name="FinFET"] transistor designs help minimize short channel effects, a critical limi... » read more

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