Research Bits: Oct. 4

2D electrode for ultra-thin semiconductors Researchers from the Korea Institute of Science and Technology (KIST), Japan's National Institute for Materials Science, and Kunsan National University designed two-dimensional semiconductor-based electronic and logic devices, with electrical properties that can be selectively controlled through a new 2D electrode material, chlorine-doped tin diseleni... » read more

Split-Gate FETs (SG-FETs)

This technical paper titled "Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications" was published by researchers at Department of Electrical and Computer Engineering, Inha University (South Korea) and Korea Institute of Science and Technology (KIST), Seoul. Abstract "Two-dimensional (2D) materials have been extensively adopted in variou... » read more

Power/Performance Bits: Sept. 15

Higher-res lidar Researchers from Purdue University and École Polytechnique Fédérale de Lausanne (EPFL) devised a way to improve lidar and provide higher-resolution detection of nearby fast-moving objects through mechanical control and modulation of light on a silicon chip. "Frequency modulated continuous wave" (FMCW) lidar detects objects by scanning laser light from the top of a vehicl... » read more

Will Self-Heating Stop FinFETs

New transistor designs and new materials don’t appear out of thin air. Their adoption always is driven by the limitations of the incumbent technology. Silicon germanium and other compound semiconductors are interesting because they promise superior carrier mobility relative to silicon. [getkc id="185" kc_name="FinFET"] transistor designs help minimize short channel effects, a critical limi... » read more