Thinning of GaN-on-GaN HEMTs With A Laser Slicing Technique

New technical paper "Laser slice thinning of GaN-on-GaN high electron mobility transistors" from researchers at Nagoya University, Hamamatsu Photonics, and National Institute for Materials Science, Tsukuba. Abstract "As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In... » read more