Thinning of GaN-on-GaN HEMTs With A Laser Slicing Technique


New technical paper “Laser slice thinning of GaN-on-GaN high electron mobility transistors” from researchers at Nagoya University, Hamamatsu Photonics, and National Institute for Materials Science, Tsukuba.

“As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In the previous report, from the perspective of GaN substrate processing, we could only show that the GaN substrate could be sliced by a laser and that the sliced GaN substrate could be reused. In this study, we newly investigated the applicability of this method as a device fabrication process. We demonstrated the thinning of GaN-on-GaN high-electron-mobility transistors (HEMTs) using a laser slicing technique. Even when the HEMTs were thinned by laser slicing to a thickness of 50 mm after completing the fabrication process, no significant fracture was observed in these devices, and no adverse effects of laser-induced damage were observed on electrical characteristics. This means that the laser slicing process can be applied even after device fabrication. It can also be used as a completely new semiconductor process for fabricating thin devices with thicknesses on the order of 10 mm, while significantly reducing the consumption of GaN substrates.”

Find the open access technical paper here. Published May 2022.

Tanaka, A., Sugiura, R., Kawaguchi, D. et al. Laser slice thinning of GaN-on-GaN high electron mobility transistors. Sci Rep 12, 7363 (2022). https://doi.org/10.1038/s41598-022-10610-4

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