tag: Nagoya University

Advancements In Atomic-Scale Plasma Processing
By Technical Paper Link - 22 Jun, 2026 - Comments: 0

Researchers from Nagoya University, Boise State University, Korea Institute of Fusion Energy, Hitachi High-Tech Corp. and Princeton Plasma Physics Laboratory published a technical paper titled “Recent Progress in Atomic-Scale Controlled Plasma Processing.” Abstract Excerpt: “Atomic-scale control in plasma processing is becoming increasingly critical for fabricating of advanced semic... » read more

GaN Power Devices Go Vertical
By Katherine Derbyshire - 18 Jun, 2026 - Comments: 0

Key Takeaways: On paper, GaN is an excellent candidate for high-voltage power applications. That potential has been difficult to realize due to the lack of sufficiently high-quality starting material. In particular, high-voltage applications require vertical designs. Recent advances in GaN growth are making these designs more feasible. Promising designs and complete process flows hav... » read more

Research Bits: Sept. 16
By Jesse Allen - 16 Sep, 2025 - Comments: 0

Beyond-EUV resists Researchers from Johns Hopkins University, East China University of Science and Technology, École Polytechnique Fédérale de Lausanne (EPFL), Soochow University, Brookhaven National Laboratory, and Lawrence Berkeley National Laboratory propose a combination of new resist materials and a higher-powered EUV process that could enable smaller chip feature sizes. The "beyond... » read more

Research Bits: Sept. 8
By Jesse Allen - 08 Sep, 2025 - Comments: 0

Gallium oxide pn diodes Researchers at Nagoya University fabricated functional gallium oxide pn diodes that can carry twice as much electrical current as previous gallium oxide diodes and waste less energy than silicon-based diodes. The key challenge in making the pn diode was creating a stable p-type gallium oxide layer. While gallium oxide's crystal structure easily accepts the atoms need... » read more

Chip Industry Week in Review
By The SE Staff - 05 Sep, 2025 - Comments: 0

Cadence plans to buy Hexagon AB's design and engineering business to accelerate expansion in physical AI and system design and analysis. Cadence will pay ~US$3.1 billion in cash and issue stock, with the deal expected to close in early 2026. PWC issued a 104-page in-depth analysis of semiconductor technology and markets, highlighting a broad swath of changes: $1T in annual revenue by 2030, ... » read more

Blog Review: Sept. 25
By Jesse Allen - 25 Sep, 2024 - Comments: 0

Cadence’s Mamta Rana digs into how PCIe 6.1 ECN builds on the FLIT-based architecture introduced in PCIe 6.0, further optimizing flow control mechanisms to handle increased data rates and improved efficiency but making verification of shared credit updates essential. Siemens’ Nicolae Tusinschi provides a primer on formal verification, including what makes it different from simulation, pr... » read more

Research Bits: Aug. 27
By Jesse Allen - 27 Aug, 2024 - Comments: 0

Ammonia-free GaN Researchers from Nagoya University discovered a way to grow gallium nitride (GaN) semiconductors without using ammonia. The process is both more environmentally friendly and allows for high-quality growth of crystals at a lower cost. Metal organic chemical vapor deposition (MOCVD) is the most common technique for GaN production, which uses ammonia (NH3) gas as the source of... » read more

Research Bits: July 12
By Jesse Allen - 12 Jul, 2023 - Comments: 0

Predicting crystal orientation Researchers from Nagoya University and RIKEN trained an AI on optical photographs of polycrystalline silicon and used it to predict crystal orientation during manufacturing. They found that the AI successfully predicted the grain orientation distribution. “The time required for this measurement was about 1.5 hours for taking optical photographs, training the... » read more

Chip Industry’s Technical Paper Roundup: May 8
By Linda Christensen - 08 May, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=102 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us... » read more

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor
By Technical Paper Link - 05 May, 2023 - Comments: 0

A technical paper titled "Gate Drive Circuit Suitable for a GaN Gate Injection Transistor" was published by researchers at Nagoya University. Abstract "A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several studies in the lite... » read more

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