Chip Industry’s Technical Paper Roundup: May 8

New low-temp growth and fabrication technology allows Integration Of 2D materials directly onto silicon circuit; memristors and switching behavior; vision and strategy for NSTC; gate drive circuit suitable for a GaN gate injection transistor; automotive ethernet trends; manufacturing printed neuromorphic circuits; HW-assisted remote attestation design for critical embedded systems.


New technical papers recently added to Semiconductor Engineering’s library:

Technical Paper Research Organizations
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform MIT, Oak Ridge National Laboratory, and Ericsson Research
A Perspective on Ethernet in Automotive Communications—Current Status and Future Trends University of Catania
Gate Drive Circuit Suitable for a GaN Gate Injection Transistor Nagoya University
Split Additive Manufacturing for Printed Neuromorphic Circuits Karlsruher Institut für Technologie (KIT)
Hardware-assisted remote attestation design for critical embedded systems University of Oxford
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes RWTH Aachen University and Peter Gruenberg Institute
A Vision and Strategy for the National Semiconductor Technology Center NIST

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