A new technical paper titled "Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator" was published by researchers at Cardiff University and University of Southampton.
Abstract
"Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by di...
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