The Impact Of EUV Resist Thickness On Via Patterning Uniformity

Via patterning at advanced nodes requires extremely low critical dimension (CD) values, typically below 30nm. Controlling these dimensions is a serious challenge, since there are many inherent sources of variation during lithography and etch processing. Coventor personnel, in conjunction with our colleagues from ASML and imec, recently looked at the impact of Extreme Ultraviolet lithography (EU... » read more

Defect Detection Strategies and Process Partitioning for SE EUV Patterning

ABSTRACT The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e-beam systems, find it difficult to detect the main yield-detracting defects post-develop, and thus understanding the effects of process ... » read more