Bias- and Temperature-Dependent Noise Measurements to Investigate Carrier Transport at the Tellurium Interface (POSTECH)


A new technical paper, "Revealing and Engineering Contact-Origin Noise in Ultrathin Tellurium Transistors," was published by researchers at Pohang University of Science and Technology. Abstract "Tellurium (Te) has emerged as a promising p-type semiconductor for ultrathin electronics owing to its strong air stability, excellent hole transport, narrow bandgap, and BEOL-integration compatibi... » read more

Electronic Noise in vdW Layered AFMS (UCLA)


A technical paper titled “Electronic Noise Spectroscopy of Quasi-2D van der Waals Antiferromagnetic Semiconductors” was published by researchers at University of California Los Angeles. Abstract: "We investigated low-frequency current fluctuations, i.e. electronic noise, in FePS3 van der Waals, layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectro... » read more

Excess noise in high-current diamond diodes


Abstract "We report the results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by the 1/f and generation-recombination noise, which reveals itself as Lorentzian spectral features (f is the frequency). The generation-recombination bulges are characteristic of diamond diodes with l... » read more