The Impact of Magnetic Fields On STT-MRAM Operations


A technical paper titled "Impact of external magnetic fields on STT-MRAM" was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. Abstract "This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of... » read more

System Bits: March 26


Swear to tell the truth Lots of lies are told on the Internet. Shuyuan Ho of Florida State University wants to unveil those falsehoods with an online polygraph. “The future of my research is an online polygraph that could be used many different ways,” said Ho, an associate professor in the College of Communication and Information. “You could use it for online dating, Facebook, Twitter... » read more

Manufacturing Bits: Dec. 31


Bringing Graphene Down To Earth For years, the semiconductor industry has been looking at graphene as a next-generation technology for a multitude of applications. One potential application, the graphene field-effect transistor (GFET), has been developed by various companies and universities. There are several advantages and disadvantages with GFETs. On one hand, GFETs have a higher mobilit... » read more