By Dr. Meng Zhu, Dr. Roman Sappey, and Jeff Barnum
MRAM (Magnetoresistive Random-Access Memory) is a type of non-volatile memory (NVM) that utilizes magnetic states to store information. The basic structure of MRAM is a magnetic-tunnel junction (MTJ), which consists of two ferromagnetic (FM) layers separated by an insulating tunnel barrier (Fig.1). When the magnetizations of the two magnetic...
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