tag: magnetic tunnel junction

High Performance Memory: Novel Lateral Double Magnetic Tunnel Junction (MTJ) With An Orthogonal Polarizer
By Technical Paper Link - 17 Nov, 2022 - Comments: 0

A new technical paper titled "Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory" was published by researchers at Hanyang University. Find the technical paper here. Published November 2022. Sin, S., Oh, S. Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory.... » read more

Radiation-Hardened Non-Volatile Magnetic Latch That Tolerates SNUs and DNUs
By Technical Paper Link - 13 Sep, 2022 - Comments: 0

A research paper titled "A Radiation-Hardened Non-Volatile Magnetic Latch with High Reliability and Persistent Storage" was published by researchers at Anhui University, Hefei University of Technology, LIRMM, and Kyutech. According to the abstract: "Based on an advanced triple-path dual-interlocked-storage-cell (TPDICE) and MTJs, this paper proposes a radiation-hardened non-volatile magneti... » read more

Novel Spintronic Neuro-mimetic Device Emulating the LIF Neuron Dynamics w/High Energy Efficiency & Compact Footprints
By Technical Paper Link - 03 Jun, 2022 - Comments: 0

New technical paper titled "Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices" from researchers at Purdue University. Abstract "The capability of emulating neural functionalities efficiently in hardware is crucial for building neuromorphic computing systems. While various types of neuro-mimetic devices have been investigated, it remains challenging to... » read more

Imaging Of Overlay And Alignment Markers Under Opaque Layers Using Picosecond Laser Acoustic Measurements
By Onto Innovation - 09 Nov, 2021 - Comments: 0

Optically opaque materials present a series of challenges for alignment and overlay in the semi-damascene process flow or after the processing of the magnetic tunnel junction (MTJ) of a Magnetic Random-Access Memory (MRAM). The overlay and alignment of a lithographically defined pattern on top of the pattern and the underlying layer is fundamental to device operation in all multi-layer patterne... » read more

Reliable And Efficient Compact Models For Scalable MTJ Simulation
By Fernando Garcia Redondo - 09 Sep, 2021 - Comments: 0

By Fernando García Redondo, Pranay Prabhat, and Mudit Bhargava Since its discovery in 1975, Tunnel-Magneto-Resistance (TMR) has been actively investigated. From the 2000s, advances in process technologies have made the miniaturization of Magnetic Random Access Memories (MRAMs) based on TMR devices possible, together with integration into traditional CMOS processes. Introducing magneti... » read more

New Memories Add New Faults
By Bryon Moyer - 07 Sep, 2021 - Comments: 1

New non-volatile memories (NVM) bring new opportunities for changing how we use memory in systems-on-chip (SoCs), but they also add new challenges for making sure they will work as expected. These new memory types – primarily MRAM and ReRAM – rely on unique physical phenomena for storing data. That means that new test sequences and fault models may be needed before they can be released t... » read more

A Compact Model For Scalable MTJ Simulation
By Technical Paper Link - 24 Aug, 2021 - Comments: 0

Read the full technical paper. Published June 9, 2021. Abstract This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in lar... » read more

MRAM Evolves In Multiple Directions
By Bryon Moyer - 11 Mar, 2021 - Comments: 1

Magnetoresistive RAM (MRAM) is one of several new non-volatile memory technologies targeting broad commercial availability, but designing MRAM into chips and systems isn't as simple as adding other types of memory. MRAM isn’t an all-things-for-all-applications technology. It needs to be tuned for its intended purpose. MRAMs targeting flash will not do as well targeting SRAMs, and vice vers... » read more

Testing Embedded MRAM IP For SoCs
By Synopsys - 11 Mar, 2020 - Comments: 0

The challenges of embedded memory test and repair are well known, including maximizing fault coverage to prevent test escapes and using spare elements to maximize manufacturing yield. With the surge in availability of promising non-volatile memory architectures to augment and potentially replace traditional volatile memories, a new set of SoC level memory test and repair challenges are emerging... » read more

MRAM Process Development And Production Briefing
By Jeff Barnum - 10 Mar, 2020 - Comments: 0

By Dr. Meng Zhu, Dr. Roman Sappey, and Jeff Barnum MRAM (Magnetoresistive Random-Access Memory) is a type of non-volatile memory (NVM) that utilizes magnetic states to store information. The basic structure of MRAM is a magnetic-tunnel junction (MTJ), which consists of two ferromagnetic (FM) layers separated by an insulating tunnel barrier (Fig.1). When the magnetizations of the two magnetic... » read more

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